Exploiting lateral current flow due to doped layers in semiconductor devices having crossbar electrodes-Reference-Cited by-同舟云学术

Exploiting lateral current flow due to doped layers in semiconductor devices having crossbar electrodes

Published:2019-02 Issue: Volume:65 Page:82-90
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Zheng Yichu,Fischer Axel,Sergeeva Natalia,Reineke Sebastian,Mannsfeld Stefan C.B.

Funder

German Excellence Initiative via the Cluster of Excellence

Center for Advancing Electronics Dresden (cfaed)

German Research Foundation

EFOD

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

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3. Doping of organic semiconductors;Lüssem;Phys. Status Solidi,2013

4. Current crowding in GaN/InGaN light emitting diodes on insulating substrates;Guo;J. Appl. Phys.,2001

5. Light-emitting Diodes;Schubert,2006

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