Improving the Performance of Quantum Dot Light-Emitting Diodes by the Enrichment of a Fluorinated Component on Top of a Hole Transport Layer-Reference-Cited by-同舟云学术

Improving the Performance of Quantum Dot Light-Emitting Diodes by the Enrichment of a Fluorinated Component on Top of a Hole Transport Layer

Published:2023-11-09 Issue:11 Volume:5 Page:6452-6458
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhong Zhiming¹^ORCID,Quan Huilei²,Zhang Jian²,Peng Feng³,Zhong Wenkai²^ORCID,Ying Lei²^ORCID

Affiliation:

1. School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China

2. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

3. Dongguan Volt-Amp Optoelectronics Technology Co., Ltd., Dongguan 523808, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

TCL science and technology innovation fund

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01316

Reference32 articles.

1. Review: Quantum Dot Light-Emitting Diodes

2. High-efficiency light-emitting devices based on quantum dots with tailored nanostructures

3. Cadmium‐Doped Zinc Sulfide Shell as a Hole Injection Springboard for Red, Green, and Blue Quantum Dot Light‐Emitting Diodes

4. An efficient green-emitting quantum dot with near-unity quantum yield and suppressed Auger recombination for high-performance light-emitting diodes

5. Solution-processed green and blue quantum-dot light-emitting diodes with eliminated charge leakage

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