Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Author:

Sk Masud Rana,Pande ShubhamORCID,Müller FranzORCID,Raffel Yannick,Lederer Maximilian,Pirro Luca,Beyer Sven,Seidel Konrad,Kämpfe Thomas,De SouravORCID,Chakrabarti BhaswarORCID

Publisher

Elsevier BV

Reference42 articles.

1. A homogeneous processing fabric for matrix-vector multiplication and associative search using ferroelectric time-domain compute-in-memory;Yin,2022

2. Random and systematic variation in nanoscale hf0.5zr0.5o2 ferroelectric finfets: Physical origin and neuromorphic circuit implications;De;Front. Nanotechnol. Emerg. Neuromorphic Electron. Mater. Post-Moore Comput. Era,2021

3. Demonstration of differential mode fefet-array based IMC-macro for realizing multi-precision mixed-signal AI accelerator;Parmar;Adv. Intell. Syst.,2023

4. Multilevel operation of ferroelectric FET memory arrays considering current percolation paths impacting switching behavior;Müller;IEEE Electron Device Lett.,2023

5. S. De, W.-X. Bu, B.-H. Qiu, C.-J. Su, Y.-J. Lee, D.D. Lu, Alleviation of Charge Trapping and Flicker Noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering, in: The 2021 International Symposium on VLSI Technology, Systems and Applications, 2021 VLSI-TSA, 2021, http://dx.doi.org/10.1109/VLSI-TSA51926.2021.9440091.

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