A MOSFET, manufactured with synchrotron X-ray lithography-Reference-Cited by-同舟云学术

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A MOSFET, manufactured with synchrotron X-ray lithography

Published:1986-12 Issue:1-4 Volume:5 Page:105-112
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hersener J.,Lässing G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Comparison of Different X-Ray Sources;Heuberger;Proc. SPIE,1984

2. Design of an X-Ray Lithography System Based on Synchrotron Radiation;Betz,1985

3. Stress Compensated Si-Membranes for X-Ray Masks;Hersener;Microcircuit Engineering Berlin,1984

4. Stress Analysis of Absorber Metals for Silicon X-Ray Masks;Herzog;Microcircuit Engineering Berlin,1984

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A MOSFET tetrode with 0.4 μm gates fabricated by mixed exposure of X-ray and DUV lithography;Microelectronic Engineering;1989-05

2. Experimental results with a scanning stepper for synchrotron-based x-ray lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-11

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