Three-dimensional simulation of ion-enhanced dry-etch processes-Reference-Cited by-同舟云学术

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Three-dimensional simulation of ion-enhanced dry-etch processes

Published:1991-03 Issue:1-4 Volume:13 Page:487-491
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Pelka Joachim

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Algorithms for numerical simulation of radio-frequency glow discharges

2. SPEEDIE : simulation of profile evolution during etching and deposition;McVittie,1990

3. The influence of ion scattering on dry etch profiles

4. Proc. 19th European Solid State Device Research Conference ESSDERC'89;Gerodolle,1989

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Mask Pattern Geometry on Plasma Etching Profiles;Japanese Journal of Applied Physics;2009-09-24

2. 3-D Topography Simulation Using Surface Representation and Central Utilities;3-Dimensional Process Simulation;1995

3. Models and algorithms for three-dimensional topography simulation with SAMPLE-3D;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1994

4. Passivation effects in novolak based resists during O2-RIE;Microelectronic Engineering;1992-03

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