Fully scaled 0.5 μm MOS circuits by synchrotron radiation X-ray lithography: Devices fabrication and overlay evaluation-Reference-Cited by-同舟云学术

Fully scaled 0.5 μm MOS circuits by synchrotron radiation X-ray lithography: Devices fabrication and overlay evaluation

Published:1989-05 Issue:1-4 Volume:9 Page:101-104
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Silverman J.P.,Dimilia V.,Katcoff D.,Wang L.K.,Warlaumont J.M.,Wilson A.D.,Devenuto R.,Hill B.,Hsia L.C.,Rippstein R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Synchrotron Radiation X-Ray Lithography: Recent Results

2. Viswanathan, R., et al., Fully-Scaled 0.5 μm MOS Circuits by Synchrotron Radiation X-Ray Lithography: Mask Fabrication and Characterization, this volume.

3. Seeger, D., Crockatt, D., Kwietniak, K., Wilson, A., and Warlaumont, J., Fully-Scaled 0.5 μm MOS Circuits by Synchrotron Radiation X-Ray Lithography: Resist Systems and Line Width Control, this volume.

4. Fabrication of Fully-Scaled 0.5 μm NMOS Test Devices Using Synchrotron Radiation X-Ray Lithography: Overlay, Resist Processes, and Device Fabrication;Silverman;J. Vac. Sci. Technol.,1988

5. An optical alignment microscope for x-ray lithography

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