Contamination issues in hydrogen plasma immersion ion implantation of silicon—a brief review
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference26 articles.
1. A new methodology to produce accurate empirical models for VLSI MOSFETs
2. Silicon-on-Insulator Technology: Materials to VLSI;Colinge,1991
3. Hydrogen induced silicon surface layer cleavage
4. Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation
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3. Surface morphology of RF plasma immersion H+ ion implanted and oxidized Si(100) surface;Journal of Physics: Conference Series;2014-05-15
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