Surface morphology of RF plasma immersion H+ ion implanted and oxidized Si(100) surface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/514/i=1/a=012036/pdf
Reference8 articles.
1. Amorphisation and sub-100-nm exfoliation of hydrogen-ion-implanted silicon
2. Defects induced by hydrogen implantation in n-Si/SiO2 structures
3. Contamination issues in hydrogen plasma immersion ion implantation of silicon—a brief review
4. Mechanical stress in silicon oxides grown on hydrogen implanted Si
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical and Morphological Characterization of Nanoscale Oxides Grown in Low-Energy H+-Implanted c-Silicon;Micro;2024-07-18
2. Detailed transmittance analysis of high-performance SnO2-doped WO3 thin films in UV–Vis region for electrochromic devices;Journal of Materials Science: Materials in Electronics;2020-09-18
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