Analysis of focused ion beam implantation of semiconductors by thermal microscopy-Reference-Cited by-同舟云学术

Analysis of focused ion beam implantation of semiconductors by thermal microscopy

Published:2001-07 Issue: Volume:142-144 Page:429-436
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Dietzel D.,Röcken H.,Pelzl J.,Bein B.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference8 articles.

1. Non-Destructive Evaluation;Rosencwaig,1994

2. Plasma etching and ion implantation on silicon, characterized by laser-modulated optical reflectance

3. D. Dietzel, H. Roecken, C. Crell, B.K. Bein, J. Pelzl, Combined electrical and optical heating in thermal wave microscopy of semiconductor devices, to be publ. in Analytical Sciences 2001 (Proc. ICPPP 11th, Kyoto, Japan, June 2000).

4. Temperature field determination of InGaAsP/InP lasers by photothermal microscopy: Evidence for weak nonradiative processes at the facets

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