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Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

  • Published:2021-09 Issue: Volume: Page:
  • ISSN:2352-8478
  • Container-title:Journal of Materiomics
  • language:en
  • Short-container-title:Journal of Materiomics

Author:

Luo Yongjian,Tang Zhenxun,Yin Xiaozhe,Chen Chao,Fan Zhen,Qin Minghui,Zeng Min,Zhou Guofu,Gao Xingsen,Lu Xubing,Dai Jiyan,Chen Deyang,Liu Jun-Ming

Publisher

Elsevier BV

Subject

Metals and Alloys,Surfaces, Coatings and Films,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and patterning of HfO2 film via sol–gel method and resistive switching effect of Pt/HfO2/LaNiO3;Materials Science in Semiconductor Processing;2024-08

2. Liquid Phase Deposition of Hafnium Oxide Thin Films;IEEE Transactions on Dielectrics and Electrical Insulation;2024-08

3. Phase transitions in ferroelectric ZrO2 thin films;Materials Science in Semiconductor Processing;2024-03

4. A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity;Journal of Materiomics;2024-01

5. Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase;Applied Physics Letters;2023-07-17
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