Forming-free artificial synapses with Ag point contacts at interface-Reference-Cited by-同舟云学术

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Forming-free artificial synapses with Ag point contacts at interface

Published:2019-06 Issue:2 Volume:5 Page:296-302
ISSN:2352-8478
Container-title:Journal of Materiomics
language:en
Short-container-title:Journal of Materiomics

Author:

Jiang Li,Lv Fu-Cheng,Yang Rui,Hu Dan-Chun,Guo Xin

Funder

Henan University of Science and Technology

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Metals and Alloys,Surfaces, Coatings and Films,Electronic, Optical and Magnetic Materials

Reference63 articles.

1. An overview of materials issues in resistive random access memory;Zhu;J Materiomics,2015

2. Nanoionics-enabled memristive devices: strategies and materials for neuromorphic applications;Wang;Adv Electron Mater,2017

3. Synaptic suppression triplet-STDP learning rule realized in second-order memristors;Yang;Adv Funct Mater,2018

4. Nanoionics-based resistive switching memories;Waser;Nat Mater,2007

5. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications;Liu;Nat Nanotechnol,2018

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1. Organic-2D composite material-based RRAM with high reliability for mimicking synaptic behavior;Journal of Materiomics;2023-08

2. Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications;Nanomaterials;2023-06-17

3. Artificial LIF Neuron With Bursting Behavior Based on Threshold Switching Device;IEEE Transactions on Electron Devices;2023-03

4. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications;Advanced Materials;2022-07

5. High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing;Nature Communications;2022-02-04

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