Synthesis of hafnium(IV) β-ketoiminates as potential precursors for the MOCVD of HfO2-Reference-Cited by-同舟云学术

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Synthesis of hafnium(IV) β-ketoiminates as potential precursors for the MOCVD of HfO2

Published:2013-02 Issue: Volume:396 Page:60-65
ISSN:0020-1693
Container-title:Inorganica Chimica Acta
language:en
Short-container-title:Inorganica Chimica Acta

Author:

González-Flores Diego,Patil Siddappa A.,Medina Phillip A.,Dever Seth,Uthaisar Chananate,Pineda Leslie W.,Montero Mavis L.,Ziller Joseph W.,Fahlman Bradley D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry

Reference40 articles.

1. Is Silicon's Reign Nearing Its End?

2. Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films

3. Molecular design of improved precursors for the MOCVD of oxides used in microelectronics

4. Hafnium and zirconium tetramethylnonanedionates as new MOCVD precursors for oxide films

5. Synthesis and characterisation of Hf(thd)2X2 derivatives [X=N(SiMe3)2, OSiMe3 and OSitBuMe2] as precursors for MOCVD of hafnium silicate films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in Deposition of Transition-Metal Oxides from Metal Enolates;PATAI'S Chemistry of Functional Groups;2016-06-21

2. Monomeric Germanium(II) Amides Bearing β‐Diketiminato Ligands: Synthesis, Structural Characterization, and Thermal Properties;European Journal of Inorganic Chemistry;2014-09-05

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