Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy-Reference-Cited by-同舟云学术

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Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy

Published:2011-11 Issue:11 Volume:111 Page:1630-1635
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Hermann Peter,Hecker Michael,Chumakov Dmytro,Weisheit Martin,Rinderknecht Jochen,Shelaev Artem,Dorozhkin Pavel,Eng Lukas M.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

3. Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

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1. Raman spectroscopy capabilities for advanced semiconductor technology devices;Applied Physics Letters;2024-07-29

2. Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy;Applied Spectroscopy;2024-04-17

3. Off-axis Raman spectroscopy for nanoscale stress metrology;Journal of Applied Physics;2022-07-21

4. Characterizations of two-dimensional materials with cryogenic ultrahigh vacuum near-field optical microscopy in the visible range;Journal of Vacuum Science & Technology A;2022-07

5. Tip-enhanced Raman spectroscopy for nanoscale probing of dynamic chemical systems;The Journal of Chemical Physics;2020-11-07

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