Anisotropic wet-chemical etching for preparation of freestanding films on Si substrates for atom probe tomography: A simple yet effective approach-Reference-Cited by-同舟云学术

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Anisotropic wet-chemical etching for preparation of freestanding films on Si substrates for atom probe tomography: A simple yet effective approach

Published:2021-11 Issue: Volume:230 Page:113402
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Tkadletz Michael,Lechner Alexandra,Pölzl Silvia,Schalk Nina

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Substrate rotation-induced chemical modulation in Ti-Al-O-N coatings synthesized by cathodic arc in an industrial deposition plant;Hans;Surf. Coat. Technol.,2016

2. Cu diffusion in single-crystal and polycrystalline TiN barrier layers: a high-resolution experimental study supported by first-principles calculations;Mühlbacher;J. Appl. Phys.,2015

3. TiN diffusion barrier failure by the formation of Cu3Si investigated by electron microscopy and atom probe tomography;Mühlbacher;J. Vac. Sci. Technol. B,2016

4. An approach to realism in field ion microscopy via zone electropolishing;Melmed;J. Vac. Sci. Technol. A,1984

5. Atom probe sample preparation;Blum,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of multiple detection events on compositional accuracy of TiN coatings in atom probe tomography;Surface and Coatings Technology;2024-02

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