Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H-Reference-Cited by-同舟云学术

Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H

Published:1998-05 Issue: Volume:227-230 Page:133-137
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kessels W.M.M,Severens R.J,van de Sanden M.C.M,Schram D.C

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Amorphous silicon technology;van de Sanden;Mater. Res. Soc. Symp. Proc.,1997

2. A Defect Density of ∼ 1014 cm-3 in Hydrogenated Amorphous Silicon Deposited at High Substrate Temperatures

3. Surface Reactions in Discharge and Cvd Deposition of Silane

4. Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane

5. W.M.M. Kessels, L. Gabella, J. Bastiaansen, R.J. Severens, M.C.M. van de Sanden, D.C. Schram, in: Papers presented at the 2nd conference on Low Temperature Plasma Diagnostics, Bad-Honnef, 1997.

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