High performance a-Si TFT with ITO/n+ ohmic layer using a Ni-silicide-Reference-Cited by-同舟云学术

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High performance a-Si TFT with ITO/n+ ohmic layer using a Ni-silicide

Published:2000-05 Issue: Volume:266-269 Page:1310-1314
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Ryu Jai Il,Choi Young Jin,Woo In Keun,Lim Byeong Chun,Jang Jin

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Low temperature polycrystalline silicon thin film transistors

2. A novel thin film transistor using double amorphous silicon active layer

3. Performance of thin hydrogenated amorphous silicon thin‐film transistors

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1. Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron;Molecules;2018-06-06

2. Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives;Thin Solid Films;2011-12

3. Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid;Journal of Applied Physics;2011-11-15

4. Preparation of ITO transparent conductive film by sol-gel method;Transactions of Nonferrous Metals Society of China;2006-12

5. Properties of a-Si:H TFTs using silicon carbonitride as dielectric;Journal of Non-Crystalline Solids;2004-06

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