Properties of a-Si:H TFTs using silicon carbonitride as dielectric-Reference-Cited by-同舟云学术

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Properties of a-Si:H TFTs using silicon carbonitride as dielectric

Published:2004-06 Issue: Volume:338-340 Page:797-801
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Lavareda G.,Nunes de Carvalho C.,Fortunato E.,Amaral A.,Ramos A.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Impact of floating gate dry etching on erase characteristics in NOR flash memory

2. High performance a-Si TFT with ITO/n+ ohmic layer using a Ni-silicide

3. Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures

4. Progressive degradation in a-Si:H/SiN thin film transistors

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical structure and optical properties of a-SiNC coatings synthesized from different disilazane precursors with the RF plasma enhanced CVD technique — a comparative study;Materials Research Express;2018-10-10

2. Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films;ECS Journal of Solid State Science and Technology;2018

3. Annealing of silicon carbonitride nanostructured thin films: interdependency of hydrogen content, optical, and structural properties;Journal of Materials Science;2017-10-03

4. FTIR analysis of a-SiCN:H films deposited by PECVD;Vacuum;2013-12

5. Electro-Optical Modulating Multistack Device Based on the CMOS-Compatible Technology of Amorphous Silicon;Lecture Notes in Electrical Engineering;2011

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