Electrical stress effects on ultrathin (2.3 nm) oxides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Behavior of the Si/SiO2interface observed by Fowler‐Nordheim tunneling
2. High-field-induced degradation in ultra-thin SiO/sub 2/ films
3. Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides
4. A reliable approach to charge-pumping measurements in MOS transistors
5. Mechanism of stress-induced leakage current in MOS capacitors
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1. Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides;Microelectronics Reliability;2005-05
2. Effect of switching from high to low dose rate on linear bipolar technology radiation response;IEEE Transactions on Nuclear Science;2004-10
3. Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices;Microelectronics Reliability;2003-09
4. Effect of boron neutralization on interface state creation after direct tunneling injections at 100 °C in 2,3-nm ultrathin gate oxides;Applied Physics Letters;2003-08-04
5. Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injection;Journal of Non-Crystalline Solids;2003-07
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