Kinetics of formation of silicides in a-Si:H/Pd interfaces monitored by in situ ellipsometry and kelvin probe techniques-Reference-Cited by-同舟云学术

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Kinetics of formation of silicides in a-Si:H/Pd interfaces monitored by in situ ellipsometry and kelvin probe techniques

Published:1991-01 Issue: Volume:137-138 Page:1055-1058
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Roca i Cabarrocas P.,Stchakovsky M.,Drevillon B.,Fortuna F.,Bernas H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Silicides for VLSI Applications;Murarka,1983

2. Kinetics of formation of silicides: A review

3. Proc. of the 10th EPVSEC;Roca i Cabarrocas,1991

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of palladium silicide thin films obtained by vacuum rapid thermal annealing of r.f. sputtered Pd films on Si;Vacuum;1998-10

2. Diagnostics of Amorphous Silicon (a-Si) Plasma Processes;Plasma Deposition of Amorphous Silicon-Based Materials;1995

3. Real‐time spectroellipsometry investigation of the interaction of silane with a Pd thin film: Formation of palladium silicides;Journal of Applied Physics;1993-08-15

4. Phase modulated ellipsometry from the ultraviolet to the infrared: In situ application to the growth of semiconductors;Progress in Crystal Growth and Characterization of Materials;1993-01

5. In situ studies of semiconductor processes by spectroellipsometry;Applied Surface Science;1993-01

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