Real‐time spectroellipsometry investigation of the interaction of silane with a Pd thin film: Formation of palladium silicides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354694
Reference14 articles.
1. Kinetics of formation of silicides in a-Si:H/Pd interfaces monitored by in situ ellipsometry and kelvin probe techniques
2. Reactivity of intermetallic thin films formed by the surface mediated decomposition of main group organometallic compounds
3. Passivation of copper by silicide formation in dilute silane
4. Silicide formation by thermal annealing of Ni and Pd on hydrogenated amorphous silicon films
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1. Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100);Physical Review B;2000-03-15
2. Quantitative study of C—H bonding in polymerlike amorphous carbon films usingin situinfrared ellipsometry;Physical Review B;1998-11-15
3. Properties of palladium silicide thin films obtained by vacuum rapid thermal annealing of r.f. sputtered Pd films on Si;Vacuum;1998-10
4. Observation of Ellipsometric Oscillations when Depositing $\bf SiO_{\ninmbi{x}}$ Film on Si(100) Substrate Using an Electron Beam Deposition Method;Japanese Journal of Applied Physics;1997-06-15
5. Real-Time Ellipsometric Measurement during Growth of(AlXGa1-X)0.52In0.48PThin Films;Japanese Journal of Applied Physics;1996-09-15
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