Surface morphology of in selective area growth by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
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1. Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation;Journal of The Electrochemical Society;2012
2. (Invited) Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation;ECS Transactions;2011-10-04
3. Growth of high quality InP layers in STI trenches on miscut Si (001) substrates;Journal of Crystal Growth;2011-01
4. Interfacet surface diffusion in selective area epitaxy of III–V semiconductors;Applied Physics Letters;1999-04-12
5. Morphology of homo-epitaxial vicinal (100) III–V surfaces;Journal of Crystal Growth;1999-04
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