Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Temperature dependence of the I–V characteristics of modulation-doped FETs
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1. Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors;Journal of Applied Physics;2024-01-08
2. Deep levels in MBE grown AlGaAs/GaAs heterostructures;MICROELECTRON ENG;2004
3. Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor;Applied Physics Letters;1999-09-13
5. Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth;Journal of Crystal Growth;1998-11
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