Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346344
Reference32 articles.
1. Deep electron traps in organometallic vapor phase grown AlxGa1−xAs
2. Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs
3. Study on fundamental defects and their effect on GaAs device properties
4. Electronic structure and binding energy of theAsGa-Asipair in GaAs: EL2 and the mobility of interstitial arsenic
5. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
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