Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference43 articles.
1. Growth of gallium nitride by hydride vapor-phase epitaxy
2. Dislocation generation in GaN heteroepitaxy
3. Gallium nitride epitaxy on (0001) sapphire
4. Defects and nucleation of GaN layers on (0001) sapphire
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3. Mechanism of nucleation and growth of catalyst-free self-organized GaN columns by MOVPE;Journal of Physics D: Applied Physics;2013-05-03
4. Growth and Characteristics of Self-Assembly Defect-Free GaN Surface Islands by Molecular Beam Epitaxy;Journal of Nanoscience and Nanotechnology;2011-04-01
5. Growth of Semiconductor Single Crystals from Vapor Phase;Springer Handbook of Crystal Growth;2010
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