Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. II–VI blue-green light emitters
2. Interface composition and stacking fault density in II-VI/III-V heterostructures
3. Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs
4. On the origin of stacking faults at the GaAs/ZnSe heterointerface
5. Light emitting diodes from MOVPE-grown p- and n-doped II–VI compounds
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1. Optical gain in CdS/ZnSe/ZnSSe heterostructures with type II band offsets;Optics & Laser Technology;2023-02
2. Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications;Journal of Alloys and Compounds;2011-05
3. Formation mechanisms of self-assembled ZnSe nanostructures on Cl-doped ZnSe thin films grown on (100) GaAs substrates;Applied Physics Letters;2007-10
4. Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures;Progress in Crystal Growth and Characterization of Materials;2002-01
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