Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications-Reference-Cited by-同舟云学术

Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Published:2011-05 Issue:18 Volume:509 Page:5525-5531
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Sadekar Harishchandra K.,Ghule Anil Vithal,Sharma Ramphal

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference34 articles.

1. Raman study of nitrogen-doped ZnSSe/GaAs epilayers

2. Carrier transport mechanisms of the writing and the erasing processes for Al∕ZnO nanoparticles embedded in a polyimide layer/p-Si diodes

3. Formation and electrical bistability properties of ZnO nanoparticles embedded in polyimide nanocomposites sandwiched between two C[sub 60] layers

4. Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition

5. Analysis of effect of temperature on ZnSSe based blue laser diode characteristics at 507nm wavelength

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