Light emitting diodes from MOVPE-grown p- and n-doped II–VI compounds
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Low temperature growth and characterization of ZnSe films grown on GaAs
2. Optical, structural and lattice dynamical properties of epitaxial Zn1 − Mg S Se1 − layers grown by metalorganic vapour phase epitaxy
3. Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II‐VI heterostructures and devices
4. High resolution transmission electron microscopy determination of Cd diffusion in single quantum well structures
5. Thermal annealing effects on p-type conductivity of nitrogendoped ZnSe grown by metalorganic vapor phase epitaxy
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE;Journal of Crystal Growth;2003-02
2. High-resolution optical detection of electron spin resonance in epitaxial semiconductor layers by coherent Raman spectroscopy;Physical Review B;2002-03-18
3. Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures;Progress in Crystal Growth and Characterization of Materials;2002-01
4. Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy;Journal of Crystal Growth;2000-06
5. Epitaxial Growth of II–VI Compounds by MOVPE;Processing of Wide Band Gap Semiconductors;2000
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