Infrared studies on GaN single crystals and homoepitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
2. Preparation and properties of free-standing HVPE grown GaN substrates
3. Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
4. GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
5. GaN Homoepitaxy for Device Applications
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1. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range;Crystals;2017-06-25
2. Optical Properties of Semiconductors;Comprehensive Semiconductor Science and Technology;2011
3. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity;physica status solidi (a);2009-12-08
4. Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition;Journal of Crystal Growth;2009-05
5. Current-voltage characteristics of n∕n lateral polarity junctions in GaN;Applied Physics Letters;2006-07-31
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