Lateral epitaxy and dislocation density reduction in selectively grown GaN structures-Reference-Cited by-同舟云学术

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Published:2001-02 Issue:4 Volume:222 Page:706-718
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zheleva Tsvetanka S.,Nam Ok-Hyun,Ashmawi Waeil M.,Griffin Jason D.,Davis Robert F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

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5. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

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