In situ measurement of carrier concentration in n-ZnSe by reflectance difference spectroscopy (RDS)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
2. Molecular beam epitaxy grown ZnSe studied by reflectance anisotropy spectroscopy and reflection high-energy electron diffraction
3. Measurement of Interface-Induced Optical Anisotropies of a Semiconductor Heterostructure: ZnSe/GaAs(100)
4. Interface, surface and bulk anisotropies of heterostructures
5. Insitudetermination of free‐carrier concentrations by reflectance difference spectroscopy
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1. Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy;Journal of Crystal Growth;2007-01
2. In situ monitored MOVPE growth of undoped and p-doped GaSb(100);Journal of Crystal Growth;2004-01
3. Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties;Journal of Crystal Growth;2003-02
4. Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation;Journal of Applied Physics;2002-07
5. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy;physica status solidi (a);2001-12
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