Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1483917
Reference13 articles.
1. Insitudetermination of free‐carrier concentrations by reflectance difference spectroscopy
2. Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs
3. Contactless electrical characterization and realization ofp‐type ZnSe
4. Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy
5. Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy
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1. CdTe reflection anisotropy line shape fitting;Materials Science and Engineering: B;2010-10
2. Reflectance Difference Spectroscopy in Vacuum–Ultraviolet Range: Developing Measurement System and Applying to Characterization of SiO2/Si Interfaces;Japanese Journal of Applied Physics;2010-02-22
3. Reflectance-difference spectroscopy as an optical probe forin situ determination of doping levels in GaAs;physica status solidi (c);2008-06
4. Reflection anisotropy spectroscopy;Reports on Progress in Physics;2005-05-05
5. Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(001);Current Applied Physics;2004-11
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