Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAs
2. Insitudetermination of free‐carrier concentrations by reflectance difference spectroscopy
3. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field
4. Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs
5. In situ measurement of carrier concentration in n-ZnSe by reflectance difference spectroscopy (RDS)
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2. Determination of the complex linear electro-optic coefficient of GaAs and InP;physica status solidi (b);2010-06-24
3. Adsorbate-induced modification of the surface electric field of GaAs (001)-c(4 × 4) measured via the linear electro-optic effect;physica status solidi (b);2010-06-23
4. Surface strain contributions to the lineshapes of reflectance difference spectra for one-electron and discrete-exciton transitions;physica status solidi (c);2008-06
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