Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
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4. High quality self‐nucleated AlxGa1−xN layers on (00.1) sapphire by low‐pressure metalorganic chemical vapor deposition
5. Relaxation Process of the Thermal Strain in the GaN/α-Al2O3Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
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2. Strain assisted inter-diffusion in GaN/AlN quantum dots;Journal of Applied Physics;2013-01-21
3. The properties of AlGaN epi layer grown by HVPE;Journal of the Korean Crystal Growth and Crystal Technology;2012-02-29
4. III-nitride-based avalanche photo detectors;Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon;2010-08-19
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