Strain assisted inter-diffusion in GaN/AlN quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4775587
Reference58 articles.
1. Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
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3. Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy
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5. Si/Ge nanostructures
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1. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters;Nanomaterials;2023-03-16
2. Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy;Superlattices and Microstructures;2021-02
3. Diffusion in GaN/AlN superlattices: DFT and EXAFS study;Applied Surface Science;2020-06
4. Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2017-12-14
5. Effects of Strain in Low-Dimensional Semiconductor Structures;Nanoscience and Nanotechnology Letters;2017-07-01
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