Fabrication of a P-stabilized GaP(001)-(2×1) surface at very low pressure studied by LEED, STM, AES, and RHEED
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Coexistence of domains: other III–V compounds and II–VI compounds (AlSb, GaP, GaSb, InAs, InP, InSb, CdTe);Physics of Solid Surfaces;2018
2. Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP2(001) Surfaces;The Journal of Physical Chemistry C;2013-01-23
3. Direct observation of dimer flipping at the hydrogen-stabilized GaP(100) and InP(100) surfaces;Physical Review B;2011-04-21
4. First-principles study of GaP(001) surfaces;Journal of Alloys and Compounds;2007-08
5. Structure of ordered and disordered InxGa1−xP(001) surfaces prepared by metalorganic vapor phase epitaxy;Surface Science;2006-07
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