Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP2(001) Surfaces-Reference-Cited by-同舟云学术

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Cluster Model Studies of Atomic Ordering in Group III Sublattice Growth over P-Rich InGaP2(001) Surfaces

Published:2013-01-23 Issue:5 Volume:117 Page:2078-2083
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Gamoke Benjamin C.¹,Raghavachari Krishnan¹

Affiliation:

1. Department of Chemistry, Indiana University, Bloomington, Indiana 47405, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp305743x

Reference37 articles.

1. The structural, electronic and optical properties of InxGa1−xP alloys

2. Spontaneous Ordering in Semiconductor Alloys

3. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

4. InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source

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