resonant tunneling diodes with super-flat interfaces grown on (4 1 1)A GaAs substrates by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
2. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy
3. Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy
4. Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy
5. Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Adsorption behavior and current–voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon;Journal of Applied Physics;2002-08
2. Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411)A Superflat Interfaces Grown by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1999-09-15
3. GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (411)A super-flat interfaces grown by MBE;Journal of Crystal Growth;1999-05
4. High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1999-04-15
5. Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy;Microelectronics Journal;1999-04
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