Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy
2. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy
3. Beryllium δ doping of GaAs grown by molecular beam epitaxy
4. Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE
5. Redistribution of Zn in GaAs‐AlGaAs heterojunction bipolar transistor structures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy;AIP Advances;2017-07
2. Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures;Journal of Crystal Growth;2003-05
3. A model for diffusion of beryllium in InGaAs/InP heterostructures;Materials Science and Engineering: B;2001-03
4. Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2000-11
5. Study of concentration-dependent Be diffusion in GaInP layers grown by gas source molecular beam epitaxy;Journal of Applied Physics;2000-05-15
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