Crystal orientation dependence of p-type contact resistance of GaN-Reference-Cited by-同舟云学术

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Crystal orientation dependence of p-type contact resistance of GaN

Published:1998-06 Issue: Volume:189-190 Page:716-719
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mochida Noriaki,Honda Tohru,Shirasawa Tomoe,Inoue Akira,Sakaguchi Takahiro,Koyama Fumio,Iga Kenichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. K. Iga, Proc. Int. Symp. on Blue Laser and LEDs, 1996, p. 263.

2. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

3. Low resistance ohmic contacts on wide band‐gap GaN

4. A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films

5. Very low resistance multilayer Ohmic contact to n‐GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparing directed efficiency of III-nitride nanowire light-emitting diodes;Journal of Nanophotonics;2014-02-13

2. Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity;Semiconductor physics, quantum electronics and optoelectronics;2010-12-30

3. First-principles calculations of ELNES and XANES of selected wide-gap materials: Dependence on crystal structure and orientation;Physical Review B;2004-07-13

4. Semiconductor photoelectric converters for the ultraviolet region of the spectrum;Semiconductors;2003-09

5. Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures;Applied Physics Letters;2001-09-03

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