Experimental evidence of the self-compensation mechanism in CdS
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Defects in wide band gap II-VI crystals
2. Characterisation of ZnSe and other II–VI semiconductors by radioactive dopants
3. Quadrupole coupling constants of AIIBVI compounds with wurtzite structure
4. Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC)
5. Diffusion of Cd in CdS
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1. First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics;Journal of Applied Physics;2016-01-08
2. Effect of chlorine doping on the structural, morphological, optical and electrical properties of spray deposited CdS thin films;Progress in Natural Science: Materials International;2015-10
3. Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices;Journal of Applied Physics;2014-08-14
4. Electrical properties of point defects in CdS and ZnS;Applied Physics Letters;2013-09-02
5. The role of Cl in the chemical bath on the properties of CdS thin films;Thin Solid Films;2013-05
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