MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition
2. Reflectance anisotropy investigation of the metalorganic chemical‐vapor deposition of III‐V heterojunctions
3. In-situ reflectance anisotropy studies of ternary III–V surfaces and growth of heterostructures
4. Atomic layer epitaxy on (001) GaAs: Real-time spectroscopy
5. In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy
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1. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
2. Time-resolved reflectance difference spectroscopy study of Sb- and As-terminated InP(100) surfaces;Journal of Crystal Growth;2003-02
3. In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE;Journal of Electronic Materials;2001-11
4. Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition;Applied Physics Letters;2001-07-09
5. Photoreflectance study of phosphorus passivation of GaAs (001);Journal of Applied Physics;2000-06
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