Formation mechanism of InxGa1−xAs bridge layers on patterned GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth
2. Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy
3. Effect of trench structure on the quality of InGaAs layers grown on patterned GaAs (111) A substrates
4. InGaAs layers of high quality grown on patterned GaAs substrates with trenches
5. The physical processes occurring during liquid phase epitaxial growth
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4. Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE;Semiconductor Science and Technology;2002-06-18
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