Observation of two independent sources for arsenic carryover
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Single‐monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy
2. Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy
3. OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wells
4. Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures
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