Surface morphology of GaSb grown on (111)B GaAs by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors
2. 3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics
3. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
4. Theory of semiconductor superlattice electronic structure
5. Strain‐induced two‐dimensional electron gas in [111] growth‐axis strained‐layer structures
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1. Molecular beam epitaxial growth and electronic transport of GaInSb/GaSb (111) quantum wells;AIP Advances;2022-04-01
2. Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates;physica status solidi (a);2019-08-08
3. A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD;Journal of Electronic Materials;2017-02-02
4. Molecular beam epitaxy of Cd3As2 on a III-V substrate;APL Materials;2016-12
5. GaN/AlGaN superlattices for p contacts in LEDs;Semiconductor Science and Technology;2014-02-12
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