Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)-Reference-Cited by-同舟云学术

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Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Published:2000-02 Issue:2-3 Volume:209 Page:486-491
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Balmer R.S,Martin T,Kane M.J,Maclean J.O,Whitaker T.J,Ayling S.G,Calcott P.D.J,Houlton M,Newey J.P,O'Mahony S.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Selective growth of GaAs in the MOMBE and MOCVD systems

2. Increasing the range of growth temperatures available for GaAs selective area growth using triisopropylgallium and arsine

3. Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)

4. Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As

5. Quantum Well Lasers;Corzine,1993

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1. Fabrication of complex oxide microstructures by combinatorial chemical beam vapour deposition through stencil masks;Thin Solid Films;2015-07

2. III-V semiconductor waveguides for photonic functionality at 780 nm;Integrated Optics: Devices, Materials, and Technologies XVIII;2014-03-08

3. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors;Dilute Nitride Semiconductors;2005

4. Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run;Journal of Lightwave Technology;2003-01

5. Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy;Applied Physics Letters;2002-02-11

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