Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy-Reference-Cited by-同舟云学术

Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy

Published:2002-02-11 Issue:6 Volume:80 Page:914-916
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Maclean J. O.,Martin T.,Houlton M. R.,Calcott P. D. J.,Ayling S. G.,Hilton K. P.,Rushworth S. A.,Smith L. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1435806

Reference10 articles.

1. Degradation kinetics of GaAs quantum well lasers

2. Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices

3. The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers

4. A novel synthetic route to ether-Free metal alkyl precursors

5. Tri‐isopropyl gallium: A very promising precursor for chemical beam epitaxy

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