Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer
3. Mechanism of organization of three-dimensional islands in SiGe/Si multilayers
4. Intermixing and shape changes during the formation of InAs self-assembled quantum dots
5. Embedding of Nanoscale 3D SiGe Islands in a Si Matrix
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1. Ge dots and nanostructures grown epitaxially on Si;Journal of Physics: Condensed Matter;2006-02-10
2. Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy;Journal of Applied Physics;2004-07-15
3. Shape transformation of Ge quantum dots due to Si overgrowth;Physica E: Low-dimensional Systems and Nanostructures;2003-03
4. The nanometer-scale selective overgrowth of Ge over Si islands on Si() windows in ultrathin SiO2 films;Surface Science;2002-01
5. Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor;Journal of Applied Physics;2001-09
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