Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. D. Bimberg (Ed.), Quantum Dot heterostructures, Wiley, Chichester, 1999.
2. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
3. Effect of growth interruption on the optical properties of InAs/GaAs quantum dots
4. Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
5. Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs
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1. Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots;Japanese Journal of Applied Physics;2009-09-24
2. Controlling the Aspect Ratio of Quantum Dots: From Columnar Dots to Quantum Rods;IEEE Journal of Selected Topics in Quantum Electronics;2008
3. Growth and characterization of InAs columnar quantum dots on GaAs substrate;Journal of Applied Physics;2007-08
4. Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study;Journal of Applied Physics;2007-07-15
5. Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: a token of the integrity of a nanostructure;Applied Physics A;2005-09
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