Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2757205
Reference58 articles.
1. Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy
2. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
3. Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots
4. Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
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1. Effects of square electric field pulses with random fluctuation on state dynamics of InAs/GaAs double quantum dots;Integrated Ferroelectrics;2016-08-12
2. Dynamics and Quantum Leakage of InAs/GaAs Double Quantum Dots under Finite Time-Dependent Square-Pulsed Electric Field;Advanced Materials Research;2015-12
3. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100);Nanotechnology;2012-02-28
4. Design and growth of metamorphic InAs/InGaAs quantum dots for single photon emission in the telecom window;CrystEngComm;2012
5. Linking computational and experimental studies of III–V quantum dots for optoelectronics and photovoltaics;JOM;2011-09
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