InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gain-Reference-Cited by-同舟云学术

InAs/InGaAs/GaAs quantum dot lasers of 1.3μm range with enhanced optical gain

Published:2003-04 Issue:1-4 Volume:251 Page:729-736
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kovsh A.R.,Maleev N.A.,Zhukov A.E.,Mikhrin S.S.,Vasil’ev A.P.,Semenova E.A.,Shernyakov Yu.M.,Maximov M.V.,Livshits D.A.,Ustinov V.M.,Ledentsov N.N.,Bimberg D.,Alferov Zh.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Infrared Vertical-Cavity Surface-Emitting Lasers: An Industrial Perspective

2. GaAs-based long-wavelength lasers

3. Low-threshold oxide-confined 1.3-μm quantum-dot laser

4. The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

5. Prevention of gain saturation by multi-layer quantum dot lasers

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